Bypass Diode Module For PV

P/N: YZPST-MK5050

REVERSE VOLTAGE:50 V

FORWARD CURRENT:50 A

FEATURES

Metal of silicon rectifier, majority carrier conduction

Guard ring for transient protection

Low power loss, high efficiency

High current capability, low IR

High surge capacity

High temperature reverse characteristic is excellent For use in photovoltaic solar cell protection

MECHANICAL DATA

Case: Molded plastic, MT09E

Epoxy: UL 94V-O rate flame retardant

Polarity: As marked

Mounting position: Any

Marking: MK5050  

Maximum Ratings and Electrical Characteristics

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60HZ, resistive or inductive load.

For capacitive load, derate current by 20%.

NOTES:

1- 300us Pulse Width, 2%Duty Cycle.

2- Thermal Resistance Junction to Case. Without Heatsink.

3- Meets The Requiements Of IEC 61215 ed. 2 Bypass Diode Thermal Test.