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YZPST-MK4045
Bypass Diode Module For PV
P/N: YZPST-MK4045
FEATURES
Metal of silicon rectifier, majority carrier conduction
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low IR
High surge capacity
High temperature reverse characteristic is excellent For use in photovoltaic solar cell protection
MECHANICAL DATA
Case: Molded plastic, MT09E
Epoxy: UL 94V-O rate flame retardant
Polarity: As marked
Mounting position: Any
Marking: MK4045
Bypass Diode Module For PV
P/N: YZPST-MK4045
FEATURES
Metal of silicon rectifier, majority carrier conduction
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low IR
High surge capacity
High temperature reverse characteristic is excellent For use in photovoltaic solar cell protection
MECHANICAL DATA
Case: Molded plastic, MT09E
Epoxy: UL 94V-O rate flame retardant
Polarity: As marked
Mounting position: Any
Marking: MK4045
Maximum Ratings and Electrical Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60HZ, resistive or inductive load.
For capacitive load, derate current by 20%.
|
Symbols |
40MT045 |
Units |
|||
|
Maximum Recurrent Peak Reverse Voltage |
VRRM |
45 |
V |
||
|
Maximum RMS Voltage |
VRMS |
31.5 |
V |
||
|
Maximum DC Blocking Voltage |
VDC |
45 |
V |
||
|
Maximum Average Forward Rectified Current at TC = 125°C |
I(AV) |
40 |
A |
||
|
Peak Forward Surge Current, |
|
|
|
||
|
8.3ms single half-sine-wave |
IFSM |
400 |
A |
||
|
superimposed on rated load (JEDEC method) |
|
|
|
||
|
Maximum Forward |
at IF = 30A, TC = 25°C |
VF |
0.55 |
|
|
|
|
at IF = 40A, TC = 25°C |
0.59 |
V |
||
|
Voltage (Note 1) |
at IF = 40A, TC =125°C |
0.47 |
|
||
|
Maximum Reverse Current |
at TJ=25℃ |
IR |
0.5 |
mA |
|
|
at Rated DC Blocking Voltage |
TJ=100℃ |
500 |
|||
|
Typical Thermal Resistance |
RθJC |
1.2 |
℃/W |
||
|
Operating Junction Temperature Range |
TOP |
-55 to +150 |
℃ |
||
|
Junction Temperature in DC Forward Current Without Reverse Bias. T ≤ 1 hour (Note 3) |
TJ |
≤ 200℃ |
℃ |
||
|
Storage Temperature Range |
Tstg |
-55 to +150 |
℃ |
||
NOTES:
1- 300us Pulse Width, 2%Duty Cycle.
2- Thermal Resistance Junction to Case. Without Heatsink.
3- Meets The Requiements Of IEC 61215 ed. 2 Bypass Diode Thermal Test.
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