Symbol

Characteristic

Conditions

Temperature

Value

1

VDRM

Repetitive peak off state voltage

-30°C£ Tj £125°C

1600

2

VDSM

Non repetitive peak off state voltage

-30°C£ Tj £125°C

1700

3

VRRM

Repetitive peak reverse voltage

-30°C£ Tj £125°C

1600

4

VRSM

Non repetitive peak reverse voltage

-30°C£ Tj £125°C

1700

5

IDRM

Repetitive peak off state current

V=VDRM

Tj = 125°C

≤ 70 mA

6

IRRM

Repetitive peak reverse current

V=VRRM

Tj = 125°C

≤ 70 mA

7

ITSM

Peak surge(non repetitive) current

Sinewave,10ms withoutreverse voltage

Tj = 125°C

36.0 kA

8

VTO

Threshold voltage

Tj = 125°C

0.82V

9

Rt

On-state slope resistance

Tj = 125°C

0.180 mohm

10

VT

On-state voltage

IT = 2500 A

Tj = 125°C

≤ 1.45V

11

VT

On-state voltage

IT = 3500 A

Tj = 125°C

≤ 1.65V

12

DI/DT

Critical rate of rise of on-state current, min.

Tj = 125°C

200 A / μ s

13

DV/DT

Critical rate of rise of off-state voltage, min.

Tj = 125°C

500 V / μ s

14

IH

Holding current, typical

Tj = 25°C

≤ 300 mA

15

IL

Latching current, typical

Tj = 25°C

≤ 700 m A

16

VGT

Gate trigger voltage

VD= 5V;

Tj = 25°C

≤ 3.0 V

17

IGT

Gate trigger current

VD= 5V;

Tj = 25°C

≤ 200 m A

18

VGD

Non-trigger gate voltage, min.

VD= VDRM

Tj = 125°C

≥ 0.25 V

19

PGM

Peak gate power dissipation

Tj = 25°C

150W

20

VFGM

Peak gate voltage (forward)

Tj = 25°C

30V

21

IFGM

Peak gate current

Tj = 25°C

10 A

22

VRGM

Peak gate voltage (reverse)

Tj = 25°C

5V

Ф A

Chip diameter

55 mm

Ф B

45~46mm

Ф C

Internal Emitter contac area =molybdenum washer internal

8.5~8.6mm

D

Chip thickness

2.4~2.7mm

E

Junction coating rubbermaxumum thickness

0.2~0.4mm